The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Apr. 30, 2014
Applicant:
Siliconfile Technologies Inc., Gyeonggi-do, KR;
Inventors:
Heui Gyun Ahn, Gyeonggi-do, KR;
Sang Wook Ahn, Gyeonggi-do, KR;
Yong Woon Lee, Gyeonggi-do, KR;
Huy Chan Jung, Gyeonggi-do, KR;
Do Young Lee, Gyeonggi-do, KR;
Assignee:
SILICONFILE TECHNOLOGIES INC., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/306 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/30604 (2013.01); H01L 21/6835 (2013.01); H01L 21/7684 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68359 (2013.01);
Abstract
A method for manufacturing a through-hole silicon via (TSV) employs the conventional trench insulation process to readily manufacture a through-hole silicon via (TSV) with achievement of an effective electrical insulation between the through-hole silicon via (TSV) and the silicon.