The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2016

Filed:

Feb. 13, 2015
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Yosuke Kimura, Hachioji, JP;

David de Roest, Kessel-L, BE;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); H01L 21/0217 (2013.01); H01L 21/02142 (2013.01); H01L 21/02274 (2013.01); H01L 21/02337 (2013.01);
Abstract

A method for forming on a substrate a doped silicon oxide film with a cap film, includes: forming an arsenosilicate glass (ASG) film as an arsenic (As)-doped silicon oxide film on a substrate; continuously treating a surface of the ASG film with a treating gas constituted by Si, N, and H without excitation; and continuously forming a silicon nitride (SiN) film as a cap film on the treated surface of the ASG film.

Published as:
TW201629267A; US2016240367A1; KR20160100263A; US9478415B2;

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