The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2016

Filed:

May. 06, 2016
Applicant:

Avalanche Technology, Inc., Fremont, CA (US);

Inventors:

Rajiv Yadav Ranjan, San Jose, CA (US);

Parviz Keshtbod, Los Altos Hills, CA (US);

Roger Klas Malmhall, San Jose, CA (US);

Assignee:

Avalanche Technology, Inc., Fremont, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/56 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5607 (2013.01); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract

The present invention is directed to a multi-state current-switching magnetic memory element configured to store a state by current flowing therethrough to switch the state including two or more magnetic tunneling junctions (MTJs) coupled in parallel between a top electrode and a bottom electrode. Each MTJ includes a free layer with a switchable magnetic orientation perpendicular to a layer plane thereof, a fixed layer with a fixed magnetic orientation perpendicular to a layer plane thereof, and a barrier layer interposed between the free layer and the fixed layer. The magnetic memory element is operable to store more than one bit of information.


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