The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Oct. 23, 2013
Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon, KR;

Inventors:

Yee Na Shin, Suwon, KR;

Seung Eun Lee, Sungnam, KR;

Yul Kyo Chung, Yongin, KR;

Doo Hwan Lee, Daejeon, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05K 1/02 (2006.01); H05K 1/11 (2006.01); H05K 3/46 (2006.01); H01L 23/00 (2006.01); H05K 1/18 (2006.01);
U.S. Cl.
CPC ...
H05K 3/4673 (2013.01); H01L 24/19 (2013.01); H01L 2224/04105 (2013.01); H05K 1/185 (2013.01); H05K 3/4602 (2013.01); H05K 2201/0154 (2013.01); H05K 2201/029 (2013.01); H05K 2201/09136 (2013.01);
Abstract

Disclosed herein is a multilayered substrate including: a second insulating layer having a fine pattern layer formed on an upper surface thereof; and a third insulating layer having a circuit pattern layer formed on an upper surface thereof and formed of a material different from the second insulating layer, the circuit pattern layer having a pattern pitch larger than that of the fine pattern layer, thereby making it possible to solve a warpage problem and perform refinement and improvement in a degree of integration of an inner wiring.


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