The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Dec. 11, 2014
Epistar Corporation, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
Provided is a method of fabricating a light-emitting diode (LED) device. A wafer is provided. The wafer has a sapphire substrate and a semiconductor layer formed on the sapphire substrate. The semiconductor layer contains a plurality of un-separated LED dies. A photo-sensitive layer is formed over the semiconductor layer. A photolithography process is performed to pattern the photo-sensitive layer into a plurality of patterned portions. The patterned portions are separated by a plurality of openings that are each substantially aligned with one of the LED dies. A metal material is formed in each of the openings. The wafer is radiated in a localized manner such that only portions of the wafer that are substantially aligned with the openings are radiated. The sapphire substrate is removed along with un-radiated portions of the semiconductor layer, thereby separating the plurality of LED dies into individual LED dies.