The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Apr. 06, 2015
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Yongjun Jeff Hu, Boise, ID (US);
Allen McTeer, Eagle, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/161 (2006.01); H01L 29/167 (2006.01); H01L 21/265 (2006.01); H01L 29/36 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/26506 (2013.01); H01L 21/26513 (2013.01); H01L 27/108 (2013.01); H01L 29/161 (2013.01); H01L 29/167 (2013.01); H01L 29/36 (2013.01); H01L 29/66666 (2013.01); H01L 27/10873 (2013.01); H01L 27/10882 (2013.01);
Abstract
An n-type field effect transistor includes silicon-comprising semiconductor material comprising a pair of source/drain regions having a channel region there-between. At least one of the source/drain regions is conductively doped n-type with at least one of As and P. A conductivity-neutral dopant is in the silicon-comprising semiconductor material in at least one of the channel region and the at least one source/drain region. A gate construction is operatively proximate the channel region. Methods are disclosed.