The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Dec. 20, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yen-Yu Chen, Taipei, TW;
Hung-Yao Chen, Hsin-Chu, TW;
Chi-Yuan Shih, Hsin-Chu, TW;
Ling-Yen Yeh, Hsin-Chu, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The disclosure relates to a fin field effect transistor (FinFET). An exemplary FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising an upper portion comprising a first semiconductor material having a first lattice constant, wherein the upper portion comprises a first substantially vertical portion having a first width and a second substantially vertical portion having a second width less than the first width over the first substantially vertical portion; and a lower portion comprising a second semiconductor material having a second lattice constant less than the first lattice constant, wherein a top surface of the lower portion has a third width less than the first width; and a gate structure covering the second substantially vertical portion.