The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Dec. 22, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Ying Xiao, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The disclosure relates to a semiconductor device. An exemplary structure for a field effect transistor comprises a substrate comprising a major surface and a cavity below the major surface; a gate stack on the major surface of the substrate; a spacer adjoining one side of the gate stack; a shallow trench isolations (STI) region disposed on the side of the gate stack, wherein the STI region is within the substrate; and a source/drain (S/D) structure distributed between the gate stack and STI region, wherein the S/D structure comprises a strained material in the cavity, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; and a S/D extension disposed between the substrate and strained material, wherein the S/D extension comprises a portion extending below the spacer and substantially vertical to the major surface.