The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Jul. 18, 2013
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventors:
Hiroyuki Shimoyama, Kawasaki, JP;
Taichi Yonemoto, Isehara, JP;
Shuji Koyama, Kawasaki, JP;
Masaki Ohsumi, Yokosuka, JP;
Keiji Matsumoto, Kawasaki, JP;
Seiichiro Yaginuma, Tokyo, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); B41J 2/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66007 (2013.01); B41J 2/16 (2013.01); B41J 2/1628 (2013.01); B41J 2/1629 (2013.01); B41J 2/1632 (2013.01); B41J 2/1635 (2013.01);
Abstract
A method of manufacturing a substrate of a liquid ejection head including: forming a plurality of recesses in a silicon wafer; etching the silicon wafer with etchant to form a depression and a plurality of through holes formed from the plurality of the recesses in the depression; and manufacturing a plurality of substrates of the liquid ejection head from the silicon wafer by dividing the silicon wafer on the basis of through holes.