The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Jan. 27, 2015
Omnivision Technologies, Inc., Santa Clara, CA (US);
Yuanwei Zheng, San Jose, CA (US);
Xianmin Yi, Menlo Park, CA (US);
Gang Chen, San Jose, CA (US);
Duli Mao, Sunnyvale, CA (US);
Dyson H. Tai, San Jose, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
A storage transistor with a storage region is disposed in a semiconductor material. A gate electrode is disposed in a bottom side of an interlayer proximate to the storage region, and a dielectric layer is disposed between the storage region and the gate electrode. An optical isolation structure is disposed in the interlayer and the optical isolation structure extends from a top side of the interlayer to the gate electrode. The optical isolation structure is also adjoining a perimeter of the gate electrode and contacts the gate electrode. A capping layer is disposed proximate to the top side of the interlayer and the capping layer caps a volume encircled by the optical isolation structure.