The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Apr. 09, 2015
Applicant:

Infineon Technologies Dresden Gmbh, Dresden, DE;

Inventors:

Joachim Weyers, Hoehenkirchen, DE;

Franz Hirler, Isen, DE;

Anton Mauder, Kolbermoor, DE;

Markus Schmitt, Neubiberg, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 23/34 (2006.01); H01L 23/367 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 23/34 (2013.01); H01L 23/367 (2013.01); H01L 23/3672 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device comprises a semiconductor body having a first surface and a second surface opposite to the first surface. The semiconductor device further comprises a first isolation layer on the first surface of the semiconductor body, and an electrostatic discharge protection structure on the first isolation layer. The electrostatic discharge protection structure has a first terminal and a second terminal. The semiconductor device further comprises a heat dissipation structure, which has a first end in contact with the electrostatic discharge protection structure and a second end which is in direct contact to an electrically isolating region.


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