The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Sep. 11, 2013
Micron Technology, Inc., Boise, ID (US);
Wolfgang Mueller, Garden City, ID (US);
Sanh D. Tang, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Some embodiments include a DRAM array layout. Wordlines extend along a first direction, and bitlines extend along a second direction that crosses the first direction. Cell active material structures are at intersections of the wordlines and bitlines. The cell active material structures have a first side coupled to a bitline and a second side coupled to a capacitor. The second side is on an opposite side of a wordline passing through a cell active material structure relative to the first side. Each cell active material structure has a connection to a bitline which is not shared with any other cell active material structures. Some embodiments include DRAM arrays and semiconductor constructions.