The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Dec. 17, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Griselda Bonilla, Hopewell Junction, NY (US);

Elbert E. Huang, Carmel, NY (US);

Chao-Kun Hu, Somers, NY (US);

Baozhen Li, South Burlington, VT (US);

Paul S. McLaughlin, Poughkeepsie, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/02 (2006.01); H01L 21/66 (2006.01); H01L 23/522 (2006.01); G01R 31/28 (2006.01); G01R 31/26 (2014.01);
U.S. Cl.
CPC ...
H01L 22/30 (2013.01); G01R 31/26 (2013.01); G01R 31/2853 (2013.01); G01R 31/2884 (2013.01); H01L 22/14 (2013.01); H01L 22/32 (2013.01); H01L 23/5226 (2013.01);
Abstract

An electromigration test structure is provided for evaluation of interconnect liner integrity in a semiconductor interconnect structure. The electromigration test structure includes a feeding line; a stress line overlying the feeding line; a first via interconnecting the feeding line and the stress line, wherein the first via comprises a bottom barrier; a first cathode sense and a second cathode sense interconnected to the feeding line; and a first anode sense and a second anode sense interconnected to the feeding line.


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