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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9472439 B1

PDFFull Text
Date of Patent:
Oct. 18, 2016

Filed:

Mar. 12, 2014

Reinforcing sheet and method for producing secondary mounted semiconductor device

Applicant:

Nitto Denko Corporation, Ibaraki-shi, Osaka, JP;

Inventors:

Naohide Takamoto, Ibaraki, JP;

Kosuke Morita, Ibaraki, JP;

Hiroyuki Senzai, Ibaraki, JP;

Assignee:

NITTO DENKO CORPORATION, Ibaraki-shi, JP;

Attorney:

Alleman Hall McCoy Russell & Tuttle LLP

Primary Examiner:

Asok K Sarkar

Int. Cl.
CPC ...
H01L 21/683 (2006.01); B32B 27/08 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); B32B 7/12 (2006.01); B32B 5/02 (2006.01); B32B 5/26 (2006.01); B32B 15/08 (2006.01); B32B 25/06 (2006.01); B32B 25/08 (2006.01); B32B 25/10 (2006.01); B32B 25/12 (2006.01); B32B 25/14 (2006.01); B32B 27/10 (2006.01); B32B 27/12 (2006.01); B32B 27/20 (2006.01); B32B 27/22 (2006.01); B32B 27/28 (2006.01); B32B 27/30 (2006.01); B32B 27/32 (2006.01); B32B 27/34 (2006.01); B32B 27/36 (2006.01); B32B 27/38 (2006.01); B32B 27/40 (2006.01); B32B 27/42 (2006.01); B32B 29/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6836 (2013.01); B32B 5/02 (2013.01); B32B 5/26 (2013.01); B32B 7/12 (2013.01); B32B 15/08 (2013.01); B32B 25/06 (2013.01); B32B 25/08 (2013.01); B32B 25/10 (2013.01); B32B 25/12 (2013.01); B32B 25/14 (2013.01); B32B 27/08 (2013.01); B32B 27/10 (2013.01); B32B 27/12 (2013.01); B32B 27/20 (2013.01); B32B 27/22 (2013.01); B32B 27/281 (2013.01); B32B 27/283 (2013.01); B32B 27/285 (2013.01); B32B 27/288 (2013.01); B32B 27/304 (2013.01); B32B 27/308 (2013.01); B32B 27/32 (2013.01); B32B 27/34 (2013.01); B32B 27/36 (2013.01); B32B 27/365 (2013.01); B32B 27/38 (2013.01); B32B 27/40 (2013.01); B32B 27/42 (2013.01); B32B 29/005 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 24/81 (2013.01); H01L 24/97 (2013.01); B32B 2255/02 (2013.01); B32B 2255/10 (2013.01); B32B 2255/12 (2013.01); B32B 2255/20 (2013.01); B32B 2255/205 (2013.01); B32B 2262/0269 (2013.01); B32B 2262/101 (2013.01); B32B 2307/50 (2013.01); B32B 2307/514 (2013.01); B32B 2307/558 (2013.01); B32B 2457/00 (2013.01); B32B 2457/14 (2013.01); H01L 23/3128 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68318 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68336 (2013.01); H01L 2221/68377 (2013.01); H01L 2221/68381 (2013.01); H01L 2221/68386 (2013.01); H01L 2224/13101 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/81191 (2013.01); H01L 2924/15787 (2013.01);
Abstract

Provided are a reinforcing sheet which is capable of forming a secondary mounted semiconductor device excellent in impact resistance and which is capable of enhancing efficiency of a secondary mounting process; and a method for producing a secondary mounted semiconductor device using the reinforcing sheet. The present invention provides a reinforcing sheet for reinforcing a secondary mounted semiconductor device in which a primary mounted semiconductor device with a bump electrode formed on a first main surface is electrically connected to a wiring substrate through the bump electrode, wherein the reinforcing sheet includes a base material layer, a pressure-sensitive adhesive layer, and a thermosetting resin layer in this order, and the pressure-sensitive adhesive layer has a breaking strength of 0.07 MPa or more, and a melt viscosity of 4000 Pa·s or less at 60 to 100° C.

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