The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Mar. 19, 2015
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Young Kyu Song, San Diego, CA (US);
Kyu-Pyung Hwang, Newton, MA (US);
Jae Sik Lee, San Diego, CA (US);
Assignee:
QUALCOMM INCORPORATED, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 23/498 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/4846 (2013.01); H01L 21/4853 (2013.01); H01L 21/4875 (2013.01); H01L 23/498 (2013.01); H01L 23/49816 (2013.01); H01L 23/49838 (2013.01); H01L 28/60 (2013.01);
Abstract
A fan-out wafer level package structure may include a multilayer redistribution layer (RDL). The multilayer RDL may be configured to couple with terminals of an embedded capacitor. The multilayer RDL may include sections with fewer layers than other sections of the multilayer RDL according to a selected equivalent series resistance (ESR) control pattern.