The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Oct. 30, 2007
Applicants:
Victor Moroz, Saratoga, CA (US);
Dipankar Pramanik, Saratoga, CA (US);
Inventors:
Victor Moroz, Saratoga, CA (US);
Dipankar Pramanik, Saratoga, CA (US);
Assignee:
SYNOPSYS, INC., Mountain View, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/324 (2006.01); H01L 21/265 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/324 (2013.01); H01L 21/26506 (2013.01); H01L 29/1054 (2013.01); H01L 29/1079 (2013.01); H01L 29/7848 (2013.01); H01L 21/26513 (2013.01);
Abstract
A method for suppressing the formation of leakage-promoting defects in a crystal lattice following dopant implantation in the lattice. The process provides a compressive layer of atoms, these atoms having a size greater than that of the lattice member atoms. The lattice is then annealed for a time sufficient for interstitial defect atoms to be emitted from the compressive layer, and in that manner energetically stable defects are formed in the lattice at a distance from the compressive layer.