The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Oct. 03, 2014
Applied Materials, Inc., Santa Clara, CA (US);
Jim Zhongyi He, San Jose, CA (US);
Ping Han Hsieh, San Jose, CA (US);
Melitta Manyin Hon, San Jose, CA (US);
Chun Yan, San Jose, CA (US);
Xuefeng Hua, Forster City, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods for surface interface engineering in semiconductor fabrication are provided herein. In some embodiments, a method of processing a substrate disposed atop a substrate support in a processing volume of a processing chamber includes: generating an ion species from an inductively coupled plasma formed within the processing volume of the processing chamber from a first process gas; exposing a first layer of the substrate to the ion species to form an ammonium fluoride (NHF) film atop the first layer, wherein the first layer comprises silicon oxide; and heating the substrate to a second temperature at which the ammonium fluoride film reacts with the first layer to selectively etch the silicon oxide.