The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Jul. 18, 2014
Shanghai Ic&d Center Co., Ltd., Shanghai, CN;
SHANGHAI IC R&D CENTER CO., LTD, Shanghai, CN;
Abstract
A manufacturing method is provided for fabricating a vertical channel gate-all-around MOSFET by epitaxy processes. The method includes growing a first epitaxial layer on a top semiconducting layer of a substrate; etching the first epitaxial layer and the top layer to form a first source/drain pattern in the top layer; etching the first epitaxial layer to form a vertical channel structure; then forming a gate dielectric layer on the vertical channel structure surface; forming a sandwich structure composed of a bottom spacer layer, a gate electrode layer and a top spacer layer; etching the top spacer layer and the gate electrode layer to form a gate pattern followed by forming a top spacer structure thereon; growing a second epitaxial layer and etching to form a second source/drain pattern.