The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Sep. 06, 2012
Applicants:
Scott Thomas Allen, Apex, NC (US);
Qingchun Zhang, Cary, NC (US);
Inventors:
Scott Thomas Allen, Apex, NC (US);
Qingchun Zhang, Cary, NC (US);
Assignee:
Cree, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01); H01L 29/165 (2006.01); H01L 21/82 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/8213 (2013.01); H01L 29/0619 (2013.01); H01L 29/165 (2013.01); H01L 29/47 (2013.01); H01L 29/66068 (2013.01); H01L 29/861 (2013.01); H01L 29/872 (2013.01);
Abstract
An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a Schottky junction with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact.