The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Dec. 21, 2015
Sandisk Technologies Inc., Plano, TX (US);
Liang Pang, Fremont, CA (US);
Jiahui Yuan, Fremont, CA (US);
Yingda Dong, San Jose, CA (US);
Jingjian Ren, San Jose, CA (US);
SanDisk Technologies LLC, Plano, TX (US);
Abstract
Techniques are provided for programming a three-dimensional memory device while minimizing over-programming and program disturb. When a selected word line is at the source-side of a set of word lines, a channel gradient is created in the channel adjacent to the selected word line when a program voltage is applied. The gradient generates hot carriers which can cause over-programming of memory cells connected to the selected word line. To reduce the amount of hot carriers, a ramp rate and/or duration of a first step up of the program voltage is reduced. When the selected word line is not at the source-side of the set of word lines, a baseline ramp rate and/or duration can be used. A ramp rate and/or duration of the voltage applied to unselected word lines can be reduced as well but by a lesser amount.