The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2016

Filed:

Nov. 17, 2015
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Anthony R. Cabrera, Folsom, CA (US);

Nicholas Hendrickson, Burnsville, MN (US);

Robert Melcher, Folsom, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 3/06 (2006.01); G06F 12/02 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0604 (2013.01); G06F 3/0629 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G06F 12/0246 (2013.01); G06F 2212/7205 (2013.01);
Abstract

Methods of operating a memory device include performing a first memory operation having an associated timing requirement; after completing the first memory operation, determining whether a timing margin between completion of the first memory operation and expiration of its associated timing requirement exceeds a length of time to perform a particular portion of a second memory operation; and performing the particular portion of the second memory operation between completion of the first memory operation and the expiration of its associated timing requirement if it is determined that the timing margin between completion of the first memory operation and expiration of its associated timing requirement exceeds the length of time to perform the particular portion of the second memory operation.


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