The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Sep. 07, 2012
Kohei Sasaki, Tokyo, JP;
Masataka Higashiwaki, Tokyo, JP;
Kohei Sasaki, Tokyo, JP;
Masataka Higashiwaki, Tokyo, JP;
TAMURA CORPORATION, Tokyo, JP;
NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY, Tokyo, JP;
Abstract
A GaOsemiconductor element, includes: an n-type β-GaOsubstrate; a β-GaOsingle crystal film, which is formed on the n-type β-GaOsubstrate; source electrodes, which are formed on the β-GaOsingle crystal film; a drain electrode, which is formed on the n-type β-GaOsubstrate surface on the reverse side of the β-GaOsingle crystal film; n-type contact regions, which are formed in the β-GaOsingle crystal film, and have the source electrodes connected thereto, respectively; and a gate electrode, which is formed on the β-GaOsingle crystal film with the gate insulating film therebetween.