The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2016

Filed:

Feb. 03, 2015
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Chen-Han Chou, Tainan, TW;

I-Chen Yang, Changhua, TW;

Yao-Wen Chang, Hsinchu, TW;

Tao-Cheng Lu, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/265 (2006.01); H01L 21/66 (2006.01); H01L 29/167 (2006.01); H01L 27/115 (2006.01); H01L 21/8232 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26586 (2013.01); H01L 21/8232 (2013.01); H01L 22/20 (2013.01); H01L 27/11521 (2013.01); H01L 27/11568 (2013.01); H01L 29/167 (2013.01);
Abstract

A semiconductor device manufacturing method includes preparing a wafer having projections formed on a substrate. The projections project upward from a surface of the substrate and have a height measured from the surface of the substrate. The method further includes determining an interval distribution representing a distribution of intervals between neighboring projections and calculating an implantation angle based on the height and the interval distribution. The implantation angle is an angle between a normal direction of the substrate and an implantation direction. The method also includes implanting ions at the calculated implantation angle.


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