The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Mar. 26, 2007
Applicants:
Witold P. Maszara, Morgan Hill, CA (US);
Qi Xiang, San Jose, CA (US);
Inventors:
Witold P. Maszara, Morgan Hill, CA (US);
Qi Xiang, San Jose, CA (US);
Assignee:
Globalfoundries, Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01);
Abstract
A method for forming a semiconductor device is provided including processing a wafer having a spacer layer and a structure layer, the spacer layer is over the structure layer. The method continues including forming a first sidewall spacer from the spacer layer, forming a structure strip from the structure layer below the first sidewall spacer, forming a masking structure over and intersecting the structure strip, and forming a vertical post from the structure strip below the masking structure.