The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Mar. 20, 2014
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Aomar Halimaoui, La Terrasse, FR;
Jean-Michel Hartmann, Meylan, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Commisariat A L'Energie Atomique et aux Energies Alternatives, Paris, FR;
Abstract
The present disclosure concerns a method involving: forming a strained silicon germanium layer by epitaxial growth over a silicon layer disposed on a substrate; implanting atoms to amorphize the silicon layer and a lower portion of the silicon germanium layer, without amorphizing a surface portion of the silicon germanium layer; and annealing, to at least partially relax the silicon germanium layer and to re-crystallize the lower portion of the silicon germanium layer and the silicon layer, so that the silicon layer becomes a strained silicon layer.