Memory tester design for soft error rate (ser) failure analysis

Abstract

A method of determining multi-bit upsets (MBU) during soft error rate (SER) testing of a memory device under test is provided. The method may include receiving an error indication based on a comparison between a generated test data pattern written to an address location on the memory device and a stored version of the generated test data pattern read from the address location on the memory device. The error indication is associated with error information associated with the comparison between the generated test data and the stored version of the generated test data. Based on the received error indication, a count value associated with one of a predetermined number of passes a plurality of generated test data patterns traverse between a first and a second memory address location on the memory device is determined. The MBU is determined based on the address location, the error information, and the count value.