The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2016
Filed:
Feb. 01, 2007
Hao-yu Chen, Kaohsiung, TW;
Chang-yun Chang, Taipei, TW;
Cheng-chuan Huang, Jhonghe, TW;
Fu-liang Yang, Hsin-Chu, TW;
Hao-Yu Chen, Kaohsiung, TW;
Chang-Yun Chang, Taipei, TW;
Cheng-Chuan Huang, Jhonghe, TW;
Fu-Liang Yang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method and system is disclosed for providing access to the body of a FinFET device. In one embodiment, a FinFET device for characterization comprises an active fin comprising a source fin, a depletion fin, and a drain fin; a side fin extending from the depletion fin and coupled to a body contact for providing access for device characterization; and a gate electrode formed over the depletion fin and separated therefrom by a predetermined dielectric layer, wherein the gate electrode and the dielectric layer thereunder have a predetermined configuration to assure the source and drain fins are not shorted.