The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2016
Filed:
Nov. 21, 2014
Cambridge Electronics, Inc., Cambridge, MA (US);
Bin Lu, Boston, MA (US);
Tomas Palacios, Belmont, MA (US);
Ling Xia, Somerville, MA (US);
Mohamed Azize, Cambridge, MA (US);
CAMBRIDGE ELECTRONICS, INC., Cambridge, MA (US);
Abstract
A semiconductor device includes a substrate, a first active layer, a second active layer, at least first and second electrodes, an E-field management layer, and at least one injection electrode. The first active layer is disposed over the substrate. The second active layer is disposed on the first active layer such that a laterally extending conductive channel arises which extends in a lateral direction. The laterally extending conductive channel is located between the first active layer and the second active layer. The first and second electrodes are electrically connected to the first active layer. The E-field management layer, which reduces the electric-field gradients arising in the first and second active layers, is disposed over the second active layer. The injection electrode is electrically connected to the E-field management layer.