The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2016
Filed:
Nov. 14, 2013
Applicant:
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Inventors:
Anthony Renau, West Newbury, MA (US);
Hans-Joachim L. Gossmann, Summit, NJ (US);
Assignee:
Varian Semiconductor Equiment Associates, Inc, Gloucester, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8236 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6681 (2013.01); H01L 29/66537 (2013.01); H01L 29/66545 (2013.01);
Abstract
A method of forming a fin field effect transistor (finFET) device includes forming a fin structure on a substrate, the substrate comprising a semiconductor material and forming a replacement gate cavity comprising an exposed portion of the fin structure and a sidewall portion adjacent the exposed portion, wherein the exposed portion of the fin structure defines a channel region. The method further includes performing at least one implant into the exposed portion of the fin structure.