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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9455326 B1

PDFFull Text
Date of Patent:
Sep. 27, 2016

Filed:

Feb. 15, 2012

Wide bandgap semiconductor device

Applicants:

Akimasa Kinoshita, Tsukuba, JP;

Noriyuki Iwamuro, Tsukuba, JP;

Inventors:

Akimasa Kinoshita, Tsukuba, JP;

Noriyuki Iwamuro, Tsukuba, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Timor Karimy

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/47 (2006.01); H01L 29/872 (2006.01); H01L 29/41 (2006.01); H01L 29/16 (2006.01); H01L 23/00 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/47 (2013.01); H01L 24/05 (2013.01); H01L 29/1608 (2013.01); H01L 29/41 (2013.01); H01L 29/475 (2013.01); H01L 29/872 (2013.01); H01L 24/48 (2013.01); H01L 29/2003 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/48463 (2013.01); H01L 2924/00013 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A wide bandgap semiconductor device includes a first conductive type high-concentration wide bandgap semiconductor substrate, a first conductive type low-concentration wide bandgap semiconductor deposited film which is formed on the semiconductor substrate, a metal film which is formed on the semiconductor deposited film so that a Schottoky interface region is formed between the metal film and the semiconductor deposited film, and a second conductive type region which is formed in a region of the semiconductor deposited film corresponding to a peripheral portion of the metal film, wherein the Schottoky interface region in the semiconductor deposited film is surrounded by the second conductive type region so that periodic island regions are formed in the Schottoky interface region.

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