The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2016
Filed:
Apr. 22, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Ling-Yen Yeh, Hsinchu, TW;
Chi-Yuan Shih, Hsinchu, TW;
Yuan-Fu Shao, Taipei, TW;
Wen-Huei Guo, Chu-bei, TW;
Tung Ying Lee, Hsinchu, TW;
Abstract
An apparatus includes a semiconductor substrate having a plurality of fins, wherein the plurality of fins includes a first group of fins and a second group of fins. The apparatus further includes a high fin density area on the semiconductor substrate including a first dielectric between the first group of fins in the high fin density area, said first dielectric having a first dopant concentration. The apparatus further includes a low fin density area on the semiconductor substrate including a second dielectric between the second group of fins in the low fin density area, said second dielectric having a second dopant concentration. The first dielectric and the second dielectric are a same material as deposited and the first dopant concentration and the second dopant concentration are different.