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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9455299 B1

PDFFull Text
Date of Patent:
Sep. 27, 2016

Filed:

Jun. 30, 2015

Methods for semiconductor sensor structures with reduced dislocation defect densities

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Zhiyuan Cheng, Lincoln, MA (US);

James Fiorenza, Wilmington, MA (US);

Calvin Sheen, Derry, NH (US);

Anthony J. Lochtefeld, Ipswich, MA (US);

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Nikolay Yushin

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/146 (2006.01); H01L 27/144 (2006.01); H01L 31/0304 (2006.01); H01L 31/0312 (2006.01); H01L 31/103 (2006.01); H01L 31/105 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14689 (2013.01); H01L 21/02532 (2013.01); H01L 27/1446 (2013.01); H01L 27/14612 (2013.01); H01L 27/14643 (2013.01); H01L 31/0304 (2013.01); H01L 31/0312 (2013.01); H01L 31/03046 (2013.01); H01L 31/103 (2013.01); H01L 31/105 (2013.01); H01L 31/1037 (2013.01); H01L 21/02381 (2013.01); H01L 21/02521 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01); H01L 21/76224 (2013.01); Y02E 10/544 (2013.01);
Abstract

Non-silicon based semiconductor devices are integrated into silicon fabrication processes by using aspect-ratio-trapping materials. Non-silicon light-sensing devices in a least a portion of a crystalline material can output electrons generated by light absorption therein. Exemplary light-sensing devices can have relatively large micron dimensions. As an exemplary application, complementary-metal-oxide-semiconductor photodetectors are formed on a silicon substrate by incorporating an aspect-ratio-trapping technique.

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