The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2016

Filed:

Nov. 07, 2014
Applicants:

Globalfoundries Inc., Grand Cayman, KY;

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Andre Labonte, Mechanicville, NY (US);

Su Chen Fan, Cohoes, NY (US);

Balasubramanian S. Pranatharthi Haran, Watervliet, NY (US);

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 27/088 (2006.01); H01L 29/45 (2006.01); H01L 23/528 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01); H01L 21/283 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/283 (2013.01); H01L 21/31144 (2013.01); H01L 21/76897 (2013.01); H01L 21/823425 (2013.01); H01L 21/823437 (2013.01); H01L 21/823468 (2013.01); H01L 21/823475 (2013.01); H01L 23/528 (2013.01); H01L 29/41775 (2013.01); H01L 29/45 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/66515 (2013.01);
Abstract

One method disclosed herein includes, among other things, forming a gate cap layer above a recessed final gate structure and above recessed sidewall spacers, forming a recessed trench silicide region that is conductively coupled to the first source/drain region, the recessed trench silicide region having an upper surface that is positioned at a level that is below the recessed upper surface of the sidewall spacers, forming a combined contact opening in at least one layer of material that exposes a conductive portion of the recessed final gate structure and a portion of the trench silicide region, and forming a combined gate and source/drain contact structure in the combined contact opening.


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