The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2016

Filed:

Jul. 19, 2012
Applicant:

Katsuhisa Kitano, Osaka, JP;

Inventor:

Katsuhisa Kitano, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 29/16 (2006.01); H05H 1/46 (2006.01); H05H 1/24 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3003 (2013.01); H01J 37/32192 (2013.01); H01J 37/32348 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02628 (2013.01); H01L 21/02664 (2013.01); H01L 21/67017 (2013.01); H01L 21/67115 (2013.01); H01L 29/1604 (2013.01); H05H 1/2406 (2013.01); H05H 1/46 (2013.01); H05H 2001/2412 (2013.01); H05H 2001/466 (2013.01); H05H 2001/4607 (2013.01);
Abstract

A hydrogenation method according to the present invention includes preparing a plasma generation section (), preparing a hermetic member (), disposing an amorphous silicon film (S) inside the hermetic member (), and performing plasma treatment on the amorphous silicon film (S) in a manner that the plasma generation section () allows a gas at a pressure around an atmospheric pressure containing a hydrogen gas to generate plasma in at least a partial region inside the hermetic member (). Suitably, the disposing an amorphous silicon film (S) includes forming the amorphous silicon film (S) inside the hermetic member () with the use of a solution in which a silane compound is dissolved.


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