The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2016
Filed:
Dec. 07, 2012
Fumihito Masuoka, Tokyo, JP;
Katsumi Nakamura, Tokyo, JP;
Takao Kachi, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An insulating film () is formed on a main surface of a semiconductor substrate () that includes an active region and a termination region. The insulating film () in the active region is etched to form an opening (). The insulating film () is used as a mask and an impurity is implanted into the semiconductor substrate () in a direction tilted by 20° or more from a direction normal to the main surface of the semiconductor substrate () while rotating the semiconductor substrate () to form a diffusion layer () in the active region. The diffusion layer () extends wider than the opening () up to below the insulating film () on the termination region side.