The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2016
Filed:
May. 18, 2012
Guoqiang Yang, Beijing, CN;
Jian Xu, Beijing, CN;
LI Chen, Beijing, CN;
Shuangqing Wang, Beijing, CN;
Shayu LI, Beijing, CN;
Guoqiang Yang, Beijing, CN;
Jian Xu, Beijing, CN;
Li Chen, Beijing, CN;
Shuangqing Wang, Beijing, CN;
Shayu Li, Beijing, CN;
INSTITUTE OF CHEMISTRY, CHINESE ACADEMY OF SCIENCES, Beijing, CN;
Abstract
The present invention provides a class of molecular glass photoresist (I and II) comprising bisphenol A as a main structure and their preparation. The molecular glass photoresist is formulated with a photoacid generator, a cross-linking agent, a photoresist solvent, and other additives into a positive or negative photoresist. A photoresist with a uniform thickness is formed on a silicon wafer by spin-coating. The photoresist formulation can be used in modern lithography, such as 248 nm photolithography, 193 nm photolithography, extreme-ultraviolet (EUV) lithography, nanoimprint lithography, electron beam lithography, and particularly in the EUV-lithography technique.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile