The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2016

Filed:

Jul. 21, 2014
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Simon Ruffell, South Hamilton, MA (US);

Thomas R. Omstead, Gloucester, MA (US);

Anthony Renau, West Newbury, MA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/22 (2006.01); H01L 21/225 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/48 (2006.01); C23C 16/50 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45536 (2013.01); C23C 16/45551 (2013.01); C23C 16/486 (2013.01); C23C 16/50 (2013.01); C23C 16/52 (2013.01); H01J 37/32357 (2013.01); H01L 21/0217 (2013.01); H01L 21/0226 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02636 (2013.01); H01L 21/225 (2013.01); H01L 21/2225 (2013.01);
Abstract

A method may include providing a substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane; directing an ion beam comprising angled ions to the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, wherein a first portion of the substrate feature is exposed to the ion beam and wherein a second portion of the substrate feature is not exposed to the ion beam; directing molecules of a molecular species to the substrate wherein the molecules of the molecular species cover the substrate feature; and providing a second species to react with the molecular species, wherein selective growth of a layer comprising the molecular species and the second species takes place such that a first thickness of the layer grown on the first portion is different from a second thickness grown on the second portion.


Find Patent Forward Citations

Ruffell, Simon. (2016). Method for selectively depositing a layer on a three dimensional structure (U.S. Patent No. 9453279). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9453279

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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