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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9450139 B1

PDFFull Text
Date of Patent:
Sep. 20, 2016

Filed:

Dec. 22, 2015

Manufacturing method of semiconductor film, manufacturing method of semiconductor device, and manufacturing method of photoelectric conversion device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Inventors:

Tetsuhiro Tanaka, Kanagawa, JP;

Erika Kato, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., , JP;

Attorney:

Husch Blackwell LLP

Primary Examiner:

Savitr Mulpuri

Int. Cl.
CPC ...
H01L 31/20 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01); H01L 31/0304 (2006.01); H01L 31/0368 (2006.01); H01L 31/0376 (2006.01); H01L 31/072 (2012.01); H01L 31/0735 (2012.01); H01L 31/113 (2006.01); H01L 31/18 (2006.01); H01L 31/105 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 31/20 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02592 (2013.01); H01L 29/04 (2013.01); H01L 29/66765 (2013.01); H01L 29/78696 (2013.01); H01L 31/0304 (2013.01); H01L 31/0376 (2013.01); H01L 31/03685 (2013.01); H01L 31/03687 (2013.01); H01L 31/03762 (2013.01); H01L 31/03765 (2013.01); H01L 31/072 (2013.01); H01L 31/0735 (2013.01); H01L 31/105 (2013.01); H01L 31/1136 (2013.01); H01L 31/1808 (2013.01); H01L 31/1812 (2013.01); H01L 31/1816 (2013.01); H01L 31/1824 (2013.01); H01L 31/1852 (2013.01); H01L 31/202 (2013.01); H01L 29/78648 (2013.01); Y02E 10/544 (2013.01); Y02E 10/545 (2013.01); Y02E 10/548 (2013.01); Y02P 70/521 (2015.11);
Abstract

A method for forming an amorphous semiconductor which contains an impurity element and has low resistivity and a method for manufacturing a semiconductor device with excellent electrical characteristics with high yield are provided. In the method for forming an amorphous semiconductor containing an impurity element, which utilizes a plasma CVD method, pulse-modulated discharge inception voltage is applied to electrodes under the pressure and electrode distance with which the minimum discharge inception voltage according to Paschen's Law can be obtained, whereby the amorphous semiconductor which contains an impurity element and has low resistivity is formed.

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