The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Jul. 03, 2014
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;
Huang-Kui Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a first capacitor structure. The first capacitor structure includes a fin structure formed over a substrate and a first gate structure formed over the substrate. In addition, a first portion of the first gate structure overlaps with a portion of the fin structure. The first capacitor structure further includes a first hard mask structure formed over the first portion of the first gate structure and a first conductive structure formed on the first hard mask structure over the first portion of the first gate structure. The first capacitor structure further includes a first contact formed on a second portion of the first gate structure. In addition, the first contact is in direct contact with the second portion of the first gate structure.