The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2016

Filed:

Mar. 18, 2014
Applicant:

Amkor Technology, Inc., Chandler, AZ (US);

Inventors:

Pil Je Sung, Seoul, KR;

Seong Min Seo, Seoul, KR;

Jong Sik Paek, Incheon, KR;

Seo Yeon Ahn, Chungju-si, KR;

Hui Tae Kim, Chungcheongbuk-do, KR;

Assignee:

Amkor Technology, Inc., Tempe, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 23/3135 (2013.01); H01L 25/50 (2013.01); H01L 21/568 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 25/0655 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/83005 (2013.01); H01L 2224/92125 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06589 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/16251 (2013.01); H01L 2924/16724 (2013.01); H01L 2924/16747 (2013.01); H01L 2924/18161 (2013.01);
Abstract

Disclosed are a semiconductor device and a manufacturing method thereof, which can achieve miniaturization and improvement in the integration level by forming a substrate using a pattern layer implemented on a wafer in a semiconductor fabrication (FAB) process. In one exemplified embodiment, the manufacturing method of the semiconductor device includes preparing a first semiconductor die including a plurality of through electrodes and a plurality of first conductive pillars, mounting the first semiconductor die to connect the first conductive pillars to the pattern layer provided on a wafer, forming a first encapsulant to cover the pattern layer and the first semiconductor die, mounting a second semiconductor die to electrically connect second conductive pillars provided in the second semiconductor die to the plurality of through electrodes exposed to a second surface of the first semiconductor die, and removing the wafer from a first surface of the pattern layer.


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