The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Jul. 13, 2014
Advanced Silicon Group, Inc., Lincoln, MA (US);
Joanne Yim, San Francisco, CA (US);
Jeffrey B. Miller, Brookline, MA (US);
Michael Jura, Santa Monica, CA (US);
Marcie R. Black, Lincoln, MA (US);
Joanne Forziati, Everett, MA (US);
Brian P. Murphy, Revere, MA (US);
Adam Standley, Cambridge, MA (US);
ADVANCED SILICON GROUP, INC., Lincoln, MA (US);
Abstract
In an aspect of this disclosure, a method is provided comprising the steps of: (a) providing a silicon-containing substrate, (b) depositing a first metal on the substrate, (c) etching the substrate produced by step (b) using a first etch, and (d) etching the substrate produced by step (c) using a second etch, wherein the second etch is more aggressive towards the deposited metal than the first etch, wherein the result of step (d) comprises silicon nanowires. The method may further comprise, for example, steps (b1) subjecting the first metal to a treatment which causes it to agglomerate and (b2) depositing a second metal.