The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Apr. 01, 2015
Globalfoundries Inc., Grand Cayman, KY;
Linus Jang, Clifton Park, NY (US);
Ryan Ryoung-Han Kim, Albany, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Methods of forming features having differing pitch spacing and critical dimensions are disclosed herein. One method includes forming an underlying layer of material above a semiconductor substrate. The method further includes forming a masking layer above the underlying layer of material. The masking layer includes features positioned above a first region of the substrate and features positioned above a second region of the substrate. The features have different pitch spacing and critical dimensions. The method further includes performing at least one etching process on the underlying layer of material through the masking layer.