The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
May. 06, 2015
United Microelectronics Corp., Hsin-Chu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor process includes the following steps. A dielectric layer is formed on a substrate. A barrier layer is formed on the dielectric layer. An ammonia thermal treatment process with a processing temperature of 650° C.˜700° C. and a nitrogen containing gas annealing process with a processing temperature of 900° C.˜1000° C. are sequentially performed on the barrier layer. The present invention also provides a semiconductor process including the following steps. A dielectric layer is formed on a substrate. A first nitrogen containing thermal treatment process is performed on the dielectric layer. A barrier layer is formed on the dielectric layer. A second nitrogen containing thermal treatment process and then an annealing process are performed in-situ on the barrier layer.