The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Aug. 21, 2014
Asahi Glass Company, Limited, Chiyoda-ku, JP;
Masaki Mikami, Chiyoda-ku, JP;
Asahi Glass Company, Limited, Chiyoda-ku, JP;
Abstract
To provide a process for producing an EUV mask blank, whereby mixing at each interface between layers constituting a Mo/Si multilayer reflective film during a step involving heating, is suppressed, and a process for producing a reflective layer-coated substrate to be used for the production of the EUV mask blank. A process for producing a reflective layer-coated substrate for EUV lithography (EUVL), which has a step of forming a Mo/Si multilayer reflective film by alternately forming a molybdenum (Mo) layer and a silicon (Si) layer on a film-forming surface of a substrate, wherein after forming each Si layer except for a Si layer as the uppermost layer among Si layers constituting the Mo/Si multilayer reflective film, the surface of such each Si layer is exposed to a nitrogen-containing atmosphere held in a plasma state without being exposed to the air atmosphere, and then, a Mo layer is formed.