The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Dec. 31, 2013
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Assignee:
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 29/423 (2006.01); H01L 27/24 (2006.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1226 (2013.01); G11C 16/0466 (2013.01); H01L 27/2436 (2013.01); H01L 29/4234 (2013.01); H01L 29/42324 (2013.01); H01L 29/42328 (2013.01); H01L 29/42344 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01); H01L 45/126 (2013.01); H01L 45/1608 (2013.01); H01L 45/1691 (2013.01);
Abstract
A memory device and a method of making the same are presented. The memory device includes a substrate and a memory cell formed on the substrate. The memory cell includes a single transistor. The single transistor includes a first gate on the substrate which functions as a control gate and a second gate embedded in the substrate which functions as a select gate.