The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Feb. 26, 2013
Kabushiki Kaisha Toshiba, Tokyo, JP;
Miyoko Shimada, Kanagawa, JP;
Akihiro Kojima, Kanagawa, JP;
Yosuke Akimoto, Kanagawa, JP;
Hideto Furuyama, Kanagawa, JP;
Hideyuki Tomizawa, Gunma, JP;
Yoshiaki Sugizaki, Kanagawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, an insulating film, a p-side interconnection section, an n-side interconnection section, a phosphor layer, and a metal film. The semiconductor layer is formed on a substrate which is then removed. The p-side interconnection section is provided on the insulating film and electrically connected to the p-side electrode. The n-side interconnection section is provided on the insulating film and electrically connected to the n-side electrode. The phosphor layer is provided on the first surface and includes a step portion continued to the side surface of the semiconductor layer. The metal film is provided on the side surface of the semiconductor layer and a side surface of the step portion of the phosphor layer.