The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Dec. 15, 2014
National Sun Yat-sen University, Kaohsiung, TW;
Ting-Chang Chang, Kaohsiung, TW;
Hua-Mao Chen, Kaohsiung, TW;
Ming-Yen Tsai, Kaohsiung, TW;
Tian-Yu Hsieh, Kaohsiung, TW;
NATIONAL SUN YAT-SEN UNIVERSITY, Kaohsiung, TW;
Abstract
A method for producing a thin film transistor includes forming a transistor prototype on a substrate. The transistor prototype includes two transparent electrodes adapted to form a source and a drain of a thin film transistor. Next, the two transparent electrodes of the transistor prototype are exposed in an environment full of a plasma. The plasma conducts a surface treatment on the two transparent electrodes of the transistor prototype to form the thin film transistor. The method can solve the problem of excessive contact resistance of the transparent conductive films of conventional thin film transistors.