The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2016

Filed:

Sep. 29, 2014
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Toshihiko Saito, Atsugi, JP;

Yuki Hata, Atsugi, JP;

Kiyoshi Kato, Atsugi, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/115 (2006.01); H01L 49/02 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G11C 16/0433 (2013.01); H01L 27/1156 (2013.01); H01L 27/11521 (2013.01); H01L 27/11526 (2013.01); H01L 27/12 (2013.01); H01L 27/1225 (2013.01); H01L 28/40 (2013.01);
Abstract

An object is to miniaturize a semiconductor device. Another object is to reduce the area of a driver circuit of a semiconductor device including a memory cell. The semiconductor device includes an element formation layer provided with at least a first semiconductor element, a first wiring provided over the element formation layer, an interlayer film provided over the first wiring, and a second wiring overlapping with the first wiring with the interlayer film provided therebetween. The first wiring, the interlayer film, and the second wiring are included in a second semiconductor element. The first wiring and the second wiring are wirings to which the same potentials are supplied.


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