The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Mar. 19, 2014
International Business Machines Corporation, Armonk, NY (US);
Emre Alptekin, Wappingers Falls, NY (US);
Nicolas L. Breil, Wappingers Falls, NY (US);
Christian Lavoie, Pleasantville, NY (US);
Ahmet S. Ozcan, Pleasantville, NY (US);
Kathryn T. Schonenberg, Wappingers Falls, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A contact can be formed by forming a layer of dielectric material on a silicon-containing region of a semiconductor substrate. An opening is created through the layer of dielectric material that exposes the silicon-containing region. A metal stack is formed within the opening. The metal stack includes at least a first metal film having a first and second type of metal and a second metal film. The metal stack and the silicon-containing region of the semiconductor substrate are annealed to form a silicide that includes the first and second types of metal and that is in contact with the semiconductor substrate. A first liner is formed within the opening and a fill metal is deposited in the opening.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile