The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2016

Filed:

Jul. 29, 2014
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Wei Shao, Singapore, SG;

Fan Zhang, Singapore, SG;

Wuping Liu, Singapore, SG;

Wei Lu, Singapore, SG;

Vish Srinivasan, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); H01L 21/76843 (2013.01); H01L 21/76895 (2013.01); H01L 23/485 (2013.01); H01L 23/53266 (2013.01);
Abstract

Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes providing a semiconductor device with a metal silicide electrically coupled thereto. A contact opening exposing the metal silicide is formed to the semiconductor device. A conductive material is deposite within the contact opening to form a contact to the metal silicide while simultaneously forming a contact seam void within the contact. A self-aligned conductive material is deposited within the contact to form a conductive plug that at least partially fills the contact seam void, and a metallization layer is deposited overlying the contact.


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